Journal
APPLIED PHYSICS LETTERS
Volume 95, Issue 22, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3268805
Keywords
bending; compressibility; doping profiles; etching; III-V semiconductors; indium compounds; molecular beam epitaxial growth; Schottky barriers; semiconductor doping; semiconductor epitaxial layers; solar cells; tensile strength
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Funding
- Army Research Laboratory MAST
- Global Photonic Energy Corporation
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We demonstrate ultrathin-film, single-crystal InP Schottky-type solar cells mounted on flexible plastic substrates. The lightly p-doped InP cell is grown epitaxially on an InP substrate via gas source molecular beam epitaxy. The InP substrate is removed via selective chemical wet-etching after the epitaxial layers are cold-welded to a 25 mu m thick Kapton (R) sheet, followed by the deposition of an indium tin oxide top contact that forms the Schottky barrier with InP. The power conversion efficiency under 1 sun is 10.2 +/- 1.0%, and its specific power is 2.0 +/- 0.2 kW/kg. The ultrathin-film solar cells can tolerate both tensile and compressive stress by bending over a < 1 cm radius without damage.
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