Journal
APPLIED PHYSICS LETTERS
Volume 95, Issue 22, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3263719
Keywords
conduction bands; contact resistance; high-k dielectric thin films; Schottky barriers; semiconductor-metal boundaries; silicon compounds; valence bands; work function
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Funding
- FUSION-COSAR-Texas ETF
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Schottky barrier height tuning using high-kappa/SiO2 interfacial dipoles is reported. Schottky barrier heights of 1.0 and 0.2 eV are observed in a TaN/p-Si diode by insertion of thin layers of high-kappa (LaOx,AlOx) and SiO2 at the metal-semiconductor interface. The dipole tunes the effective work function of TaN/p-Si by more than 0.8 eV to achieve effective Schottky barrier heights near conduction and valence band edge. LaOx (n-type) and AlOx (p-type) have a dipole potential offsets estimated to be 0.3 and 0.5 V, respectively. Applications to lowering contact resistivity are discussed, as well as a comparison of other dipole offsets.
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