Journal
APPLIED PHYSICS LETTERS
Volume 95, Issue 22, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3270539
Keywords
electrical resistivity; elemental semiconductors; energy gap; Ge-Si alloys; Landau levels; many-valley semiconductors; semiconductor heterojunctions; semiconductor materials; semiconductor quantum wells; silicon
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Funding
- MEXT, Japan [21244047, 20029005]
- Grants-in-Aid for Scientific Research [20029005, 21244047] Funding Source: KAKEN
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The valley splitting in Si two-dimensional electron systems is studied using Si/SiGe single quantum wells (QWs) with different well widths. The energy gaps for 4 and 5.3 nm QWs, obtained from the temperature dependence of the longitudinal resistivity at the Landau level filling factor nu=1, are much larger than those for 10 and 20 nm QWs. This is consistent with the well-width dependence of the bare valley splitting estimated from the comparison with the Zeeman splitting in the Shubnikov-de Haas oscillations.
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