Journal
APPLIED PHYSICS LETTERS
Volume 95, Issue 23, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3272926
Keywords
-
Categories
Funding
- MEXT, Japan [20246054, 21360140, 19048001]
- Japan Science and Technology Agency (JST)
- Japan Society for the Promotion of Science
- Grants-in-Aid for Scientific Research [21360140, 20246054, 19048001] Funding Source: KAKEN
Ask authors/readers for more resources
Fully epitaxial Co2MnSi (CMS)/MgO/CMS magnetic tunnel junctions (MTJs) with various values of Mn composition alpha in Co2Mn alpha Si electrodes were fabricated and the influence of alpha on the tunnel magnetoresistance (TMR) characteristics of these MTJs was investigated. MTJs with Mn-rich CMS electrodes showed TMR ratios, up to 1135% at 4.2 K and 236% at room temperature for alpha = 1.29, exceeding those of MTJs with CMS electrodes having an almost stoichiometric composition. A possible origin of the higher TMR ratios for alpha beyond 1.0 is a decreased density of gap states existing around the Fermi level in the half-metal gap caused by the suppression of Co-Mn antisites, where a Mn site is replaced by a Co atom, for Mn-rich CMS electrodes. (C) 2009 American Institute of Physics. [doi: 10.1063/1.3272926]
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available
Share Paper
