Journal
APPLIED PHYSICS LETTERS
Volume 95, Issue 23, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3272017
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Funding
- Natural Science Foundation of China [60676032, 60736033, 10774001, 60890193]
- National Basic Research Program of China [2006CB604908, 2006CB921607]
- Beijing Natural Science Foundation [4062017]
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Near-lattice-matched and highly compressive-strained InxAl1-xN epilayers were grown on GaN templates by metalorganic chemical vapor deposition. The V-defects associated with screw-component threading dislocations (TDs) were found in all the InxAl1-xN layers. Their origin and evolution were investigated through near-lattice-matched In0.173Al0.827N layers with different thicknesses. Furthermore, small V-defects not associated with TDs were also found in InxAl1-xN layers with high In composition (x=0.231). Stacking mismatch boundaries induced by lattice relaxation in InxAl1-xN epilayers under large strain is believed to be another mechanism forming V-defects. (C) 2009 American Institute of Physics. [doi: 10.1063/1.3272017]
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