4.6 Article

Electrical spin injection into Si: A comparison between Fe/Si Schottky and Fe/Al2O3 tunnel contacts

Journal

APPLIED PHYSICS LETTERS
Volume 94, Issue 12, Pages -

Publisher

AMER INST PHYSICS
DOI: 10.1063/1.3099049

Keywords

acoustic emission; alumina; electroluminescence; elemental semiconductors; iron; magnetisation; MIS structures; phonons; Schottky barriers; semiconductor heterojunctions; silicon; spin polarised transport; transmission electron microscopy; tunnelling

Funding

  1. NRL
  2. Office of Naval Research [N0001409WX21042]

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We compare electrical spin injection from Fe into Si n-i-p heterostructures using different tunnel barriers-a reversed biased Fe/Si Schottky contact and a Fe/Al2O3 barrier. The electroluminescence (EL) spectra are dominated by transverse acoustic and optical phonon emission for both types of structures. The circular polarization of the EL tracks the Fe magnetization, confirming that the spin-polarized electrons originate from the Fe in each case. However, the polarization is lower for the Fe/Si contact than for the Fe/Al2O3 contact. Transmission electron microscopy reveals a complex interface and intermixing for Fe/Si that is absent in Fe/Al2O3/Si.

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