Related references
Note: Only part of the references are listed.Formation of high density tungsten nanodots embedded in silicon nitride for nonvolatile memory application
Yanli Pei et al.
APPLIED PHYSICS LETTERS (2009)
Cobalt nanodots formed by annealing the CoSiO layer for the application of the nonvolatile memory
Chih-Wei Hu et al.
APPLIED PHYSICS LETTERS (2009)
Charge storage characteristics in metal-oxide-semiconductor memory structure based on gradual Ge1-xSix/Si heteronanocrystals
Jin Lu et al.
APPLIED PHYSICS LETTERS (2008)
Memory characteristics of cobalt-silicide nanocrystals embedded in HfO2 gate oxide for nonvolatile nanocrystal flash devices
JooHyung Kim et al.
APPLIED PHYSICS LETTERS (2008)
Reliability characteristics of NiSi nanocrystals embedded in oxide and nitride layers for nonvolatile memory application
Wei-Ren Chen et al.
APPLIED PHYSICS LETTERS (2008)
Electrical characterization of metal-oxide-semiconductor memory devices with high-density self-assembled tungsten nanodots
Yan-Li Pei et al.
JAPANESE JOURNAL OF APPLIED PHYSICS (2008)
Formation of Ru nanocrystals by plasma enhanced atomic layer deposition for nonvolatile memory applications
Sung-Soo Yim et al.
APPLIED PHYSICS LETTERS (2006)
Charge storage in a metal-oxide-semiconductor capacitor containing cobalt nanocrystals
DT Zhao et al.
SOLID-STATE ELECTRONICS (2006)
Memory characteristics of silicon nitride with silicon nanocrystals as a charge trapping layer of nonvolatile memory devices
S Choi et al.
APPLIED PHYSICS LETTERS (2005)
Effect of annealing environment on the memory properties of thin oxides with embedded Si nanocrystals obtained by low-energy ion-beam synthesis
P Normand et al.
APPLIED PHYSICS LETTERS (2003)
Modeling of the programming window distribution in multinanocrystals memories
L Perniola et al.
IEEE TRANSACTIONS ON NANOTECHNOLOGY (2003)
Share Paper
