Journal
APPLIED PHYSICS LETTERS
Volume 95, Issue 3, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3189085
Keywords
cobalt; electron traps; hafnium compounds; monolayers; MOS capacitors; nanostructured materials; quantum dots; random-access storage; self-assembly; transmission electron microscopy; X-ray photoelectron spectra
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Funding
- Ministry of Education, Culture, Sports, Science, and Technology of Japan [18063002]
- Grants-in-Aid for Scientific Research [18063002] Funding Source: KAKEN
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In this letter, cobalt nanodots (Co-NDs) had been formed via a self-assembled nanodot deposition. High resolution transmission electron microscopy and x-ray photoelectron spectroscopy analyses clearly show that the high metallic Co-ND is crystallized with small size of similar to 2 nm and high density of (4-5)x10(12)/cm(2). The metal-oxide-semiconductor device with high density Co-NDs floating gate and high-k HfO2 blocking dielectric exhibits a wide range memory window (0-12 V) due to the charge trapping into and distrapping from Co-NDs. After 10 years retention, a large memory window of similar to 1.3 V with a low charge loss of similar to 47% was extrapolated. The relative longer data retention demonstrates the advantage of Co-NDs for nonvolatile memory application.
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