Related references
Note: Only part of the references are listed.In adlayer mediated molecular beam epitaxial growth and properties of a-plane InN on freestanding GaN
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Evidence for p-type doping of InN
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Intrinsic electron accumulation at clean InN surfaces
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Growth of a-plane InN on r-plane sapphire with a GaN buffer by molecular-beam epitaxy
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Surface charge accumulation of InN films grown by molecular-beam epitaxy
H Lu et al.
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