Journal
APPLIED PHYSICS LETTERS
Volume 95, Issue 20, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3259416
Keywords
MIS structures; point contacts; semiconductor quantum dots
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Funding
- Sandia National Laboratories Directed Research
- Sandia National Laboratories
- Sandia Corporation
- Lockheed-Martin Co.
- U. S. Department of Energy [DE-AC04-94AL85000]
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Laterally coupled charge sensing of quantum dots is highly desirable because it enables measurement even when conduction through the quantum dot itself is suppressed. In this work, we demonstrate such charge sensing in a double-top-gated metal-oxide-semiconductor system. The current through a point contact constriction integrated near a quantum dot shows sharp 2% changes corresponding to charge transitions between the dot and a nearby lead. We extract the coupling capacitance between the charge sensor and the quantum dot, and we show that it agrees well with a three-dimensional capacitance model of the integrated sensor and quantum dot system.
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