4.6 Article

Bipolar resistive switching in individual Au-NiO-Au segmented nanowires

Journal

APPLIED PHYSICS LETTERS
Volume 95, Issue 20, Pages -

Publisher

AMER INST PHYSICS
DOI: 10.1063/1.3263733

Keywords

electrical resistivity; electromigration; gold; MIM structures; nanocontacts; nanowires; nickel compounds; vacancies (crystal)

Funding

  1. National Science Foundation through the MRSEC [0820414]
  2. IGERT [960943]
  3. Direct For Mathematical & Physical Scien
  4. Division Of Materials Research [820414] Funding Source: National Science Foundation

Ask authors/readers for more resources

Evidence for bipolar resistive switching is reported in individual metal-oxide-metal (MOM) nanowires in the system Au-NiO-Au, and a plausible mechanism for the same is presented. The MOM nanowire architecture may be well suited for much needed fundamental studies of resistive switching because it provides (i) high-quality end-on contacts, (ii) control over the dimensions of the oxide, (iii) ability to synthesize a very large number of nearly identical nanowires in a wide variety of MOM systems, and (iv) elimination of substrate-induced strain effects.

Authors

I am an author on this paper
Click your name to claim this paper and add it to your profile.

Reviews

Primary Rating

4.6
Not enough ratings

Secondary Ratings

Novelty
-
Significance
-
Scientific rigor
-
Rate this paper

Recommended

No Data Available
No Data Available