Journal
APPLIED PHYSICS LETTERS
Volume 95, Issue 18, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3261751
Keywords
aluminium; chromium; elemental semiconductors; hydrogenation; impurities; iron; manganese; plasma deposition; semiconductor thin films; silicon; titanium
Categories
Funding
- New Energy and Industrial Technology Development Organization (NEDO) of Japan [06A31013d]
Ask authors/readers for more resources
Purified Si film is prepared directly from metallurgical-grade Si (MG-Si) by using hydrogen plasma induced chemical transport at subatmospheric pressure. The purification mechanism is based on the different hydrogenation behaviors of the various impurity elements in MG-Si. The prepared Si films clearly had fewer typical metal impurities (Fe, Al, Ti, Cr, Mn, etc.) than those in the MG-Si. In particular, the Fe concentration was drastically reduced from 6900 mass ppm to less than 0.1 mass ppm by one time chemical transport. Furthermore, metal impurity concentrations were further reduced by repeating chemical transport deposition.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available
Share Paper
