Journal
APPLIED PHYSICS LETTERS
Volume 94, Issue 16, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3120551
Keywords
aluminium compounds; gallium compounds; III-V semiconductors; indium compounds; molecular beam epitaxial growth; semiconductor quantum wells; semiconductor superlattices; silicon; wide band gap semiconductors; X-ray diffraction
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Funding
- Research Corporation Cottrell College [7331]
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Strong near-infrared intersubband absorption is observed directly at room temperature in silicon-doped lattice-matched InAlN/GaN superlattices grown by molecular-beam epitaxy on GaN templates grown by hydride vapor-phase epitaxy. X-ray diffraction characterization of the heterostructures indicates excellent layer thickness uniformity and low interface roughness. For 2-4.5 nm quantum wells, the intersubband transition energies span the technologically relevant range between 2.3 and 2.9 mu m. The experimental results are in good agreement with calculations of the transition energies using a conduction band offset of 1 eV and spontaneous polarization of 3 MV/cm.
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