Journal
APPLIED PHYSICS LETTERS
Volume 94, Issue 21, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3147856
Keywords
electron density; ferromagnetic materials; Hall effect; II-VI semiconductors; magnetic hysteresis; magnetic semiconductors; magnetic thin films; semiconductor thin films; wide band gap semiconductors; zinc compounds
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Funding
- DOE Division of Materials Sciences and Engineering [DE-AC0205CH11231]
- Western Institute of Nanoelectronics
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Electric field-controlled ferromagnetism of (Zn,Co)O is demonstrated via anomalous Hall effect measurements. The electron carrier concentration in this material is 1.65x10(20) cm(-3) as measured via ordinary Hall effect at 4 K, and an anomalous Hall effect is observed up to 6 K, but with no hysteresis at any temperature. With positive electric gate field, the carrier concentration is increased by approximately 2%, resulting in a clear magnetic hysteresis at 4 K. The ability to reversibly induce/eliminate ferromagnetism by applied gate field alone, measured via the effect on the carriers, is a clear sign of carrier-induced ferromagnetism in this system.
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