Journal
APPLIED PHYSICS LETTERS
Volume 94, Issue 17, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3127514
Keywords
II-VI semiconductors; logic gates; nanowires; semiconductor quantum wires; transistors; wide band gap semiconductors; zinc compounds
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Funding
- Korea Research Foundation
- Proton Accelerator User Program of Korea
- National Research Laboratory (NRL)
- Korea Science and Engineering Foundation (KOSEF)
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We demonstrate ZnO nanowire logic inverters consisting of n-channel depletion-mode (D-mode) transistors and n-channel enhancement-mode (E-mode) transistors that are selectively controlled by smooth- and corrugated-surface ZnO nanowires grown on two different types of substrates via a vapor transport method. Our inverter circuits, by combination of both D-mode and E-mode ZnO nanowire devices, show desired voltage transfer characteristics with a high gain and robust noise margin in a simple circuit design with less power dissipation, which makes them superior to logic inverters based on single-mode nanowire transistors.
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