Journal
APPLIED PHYSICS LETTERS
Volume 94, Issue 17, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3129865
Keywords
aluminium compounds; field effect transistors; gallium compounds; III-V semiconductors; semiconductor growth; semiconductor heterojunctions; wide band gap semiconductors
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Funding
- Solid State Lighting and Energy Center (SSLEC)
- Office of Naval Research through Millimeter-wave Initiative for Nitride Electronics (MINE)
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Field-effect transistors (FETs) were grown on both GaN and AlGaN buffers. X-ray reciprocal space mapping and omega-2 theta scans showed that the AlGaN barriers grown on these two buffers had different Al compositions and growth rates, which was attributed to the compositional pulling effect. AlGaN/GaN/AlGaN double heterojunction FETs exhibited lower output conductance and better pinch-off due to the improved electron confinement resulting from the increase in the effective back-side barrier height. Thus, this device is promising for highly scaled transistors. This device also demonstrated a state-of-the-art power added efficiency of 53.5% and an associated power gain of 9.1 dB at a drain bias of 20 V at 30 GHz.
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