Journal
APPLIED PHYSICS LETTERS
Volume 95, Issue 3, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3187534
Keywords
conduction bands; III-V semiconductors; indium compounds; molecular beam epitaxial growth; photoluminescence; plasma materials processing; semiconductor epitaxial layers; semiconductor growth
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Funding
- Engineering and Physical Science Research Council (EPSRC) [EP/P503825/1]
- EPSRC [EP/G000190/1] Funding Source: UKRI
- Engineering and Physical Sciences Research Council [EP/G000190/1] Funding Source: researchfish
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We report the growth of InAsN onto GaAs substrates using nitrogen plasma source molecular beam epitaxy. We describe the spectral properties of InAsN alloys with N-content in the range of 0%-1% and photoluminescence emission in the midinfrared spectral range. The photoluminescence emission of the sample containing 1% N reveals localized energy levels resonant with the conduction band states of InAsN.
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