Journal
APPLIED PHYSICS LETTERS
Volume 95, Issue 2, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3180494
Keywords
electron spin polarisation; gallium arsenide; III-V semiconductors; magnetoelectronics; mesoscopic systems; spin Hall effect
Categories
Funding
- NSF [DMR 0804199]
- U.S. DOE [DE-AC5206NA25396]
Ask authors/readers for more resources
We propose a spintronic device to generate spin polarization in a mesoscopic region by purely electric means. We show that the spin Hall effect in combination with the stirring effect are sufficient to induce measurable spin polarization in a closed geometry. Our device structure does not require the application of magnetic fields, external radiation or ferromagnetic leads, and can be implemented in standard semiconducting materials.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available