Journal
APPLIED PHYSICS LETTERS
Volume 94, Issue 25, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3157277
Keywords
electroluminescence; elemental semiconductors; excitons; photoluminescence; point defects; silicon
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Funding
- NSF [ECCS-0701417]
- NDSEG graduate fellowship
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We present a model of the temperature dependence of point-defect-mediated luminescence in silicon derived from basic kinetics and semiconductor physics and based on the kinetics of bound exciton formation. The model provides a good fit to data for W line electroluminescence and G line photoluminescence in silicon. Strategies are discussed for extending luminescence to room temperature.
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