Journal
APPLIED PHYSICS LETTERS
Volume 94, Issue 26, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3159838
Keywords
gallium arsenide; indium compounds; nonlinear optics; optical fabrication; optical waveguides; semiconductor quantum dots; wetting
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The nonlinear recovery of quantum dot based reverse-biased waveguide absorbers is investigated both experimentally and analytically. We show that the recovery dynamics consists of a fast initial layer followed by a relatively slow decay. The fast recovery stage is completely determined by the intradot properties, while the slow stage depends on the escape from the dot to the wetting layer.
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