4.6 Article

Controlling high-mobility conduction in SrTiO3 by oxide thin film deposition

Journal

APPLIED PHYSICS LETTERS
Volume 94, Issue 1, Pages -

Publisher

AMER INST PHYSICS
DOI: 10.1063/1.3063026

Keywords

carrier density; chemical analysis; doping; high-temperature effects; insulating thin films; oxygen; pulsed laser deposition; strontium compounds; vacancies (crystal)

Funding

  1. Croatian MZOS [119-1191458-1023]

Ask authors/readers for more resources

SrTiO3 becomes a high-mobility metallic conductor when doped with oxygen vacancies at low concentrations (>= 10(16) cm(-3)). We show that the vacancy concentration in the SrTiO3 single crystal substrates could be controllably tuned by changing the thickness of oxide films (deposited by pulsed laser deposition at high temperature and low oxygen pressure). The obtained variation in the carrier density strongly influences the transport properties. The quantitative analysis of the experimental results leads toward new and accurate strategies for the design of multifunctional oxide heterostructures for electronics and spintronics.

Authors

I am an author on this paper
Click your name to claim this paper and add it to your profile.

Reviews

Primary Rating

4.6
Not enough ratings

Secondary Ratings

Novelty
-
Significance
-
Scientific rigor
-
Rate this paper

Recommended

No Data Available
No Data Available