Journal
APPLIED PHYSICS LETTERS
Volume 94, Issue 4, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3075606
Keywords
field effect transistors; II-VI semiconductors; magnesium compounds; nanostructured materials; nanotechnology; passivation; semiconductor heterojunctions; wide band gap semiconductors; zinc compounds
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Funding
- National Creative Research Initiative Project [R16-2004004-01001-0]
- Korea Science and Engineering Foundations (KOSEF)
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We report on fabrication and electrical characteristics of field effect transistors (FETs) based on ZnO/Mg0.2Zn0.8O coaxial nanorod heterostructures. As compared to bare ZnO nanorod FETs, coaxial nanorod heterostructure FETs exhibited the enhanced mobility (similar to 110 cm(2)/V s), superior subthreshold swing (similar to 200 mV/decade), and negligibly small hysteresis to demonstrate very stable operation of high-performance nanorod FETs. In situ surface passivation and carrier confinement effects provided by heteroepitaxially grown Mg0.2Zn0.8O shell layer are presumably responsible for the highly enhanced device performance.
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