Journal
APPLIED PHYSICS LETTERS
Volume 94, Issue 4, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3077025
Keywords
bending; field effect transistors; fullerene devices; fullerenes; invertors; mechanical stability; organic semiconductors
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Funding
- STC Program of the National Science Foundation [DMR-0120967]
- Office of Naval Research
- Microelectronics Research Center at Georgia Institute of Technology
- National Nanotechnology Infrastructure Network, which is supported by NSF [ECS-03-35765]
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We report on flexible organic complementary inverters using pentacene and C-60 as active semiconductors fabricated on a plastic substrate. Individual transistors as well as inverters show good operational stability with negligible hysteresis. The threshold voltages are comparable for p-channel pentacene and n-channel C-60 organic field-effect transistors, and noise margins larger than 80% of the maximum theoretical values were obtained at a supply voltage V-DD as low as 3 V. A high dc gain of 180 was achieved at V-DD=5 V. The inverters demonstrated good mechanical stability when tested after bending under both tensile and compressive stress.
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