Trap states and transport characteristics in picene thin film field-effect transistor

Transport characteristics and trap states are investigated in picene thin film field-effect transistor under O-2 atmosphere on the basis of multiple shallow trap and release (MTR) model. The channel transport is dominated by MTR below 300 K. It has been clarified on the basis of MTR model that the O-2-exposure induces a drastic reduction in shallow trap density to increase both the field-effect mobility mu and on-off ratio. We also found that the O-2-exposure never caused an increase in hole carrier density. Actually, a very high mu value of 3.2 cm(2) V-1 s(-1) is realized under 500 Torr of O-2.