Journal
APPLIED PHYSICS LETTERS
Volume 94, Issue 4, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3077017
Keywords
crystal defects; current density; gallium compounds; III-V semiconductors; indium compounds; light emitting diodes; semiconductor quantum wells; tunnelling; wide band gap semiconductors
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InGaN/GaN multiple-quantum-well green light-emitting diodes (LEDs) were grown on freestanding GaN and sapphire substrates. The density of microstructural defects in the LED on GaN was substantially reduced, leading to a significant reduction in defect-assisted tunneling currents and an improved injection efficiency under low bias. The LED on GaN outperformed the LED on sapphire at low injection currents and exhibited a similar to 65% peak internal quantum efficiency. However, it suffered from even more dramatic efficiency roll-off, which occurs at a current density as low as 0.3 A/cm(2). This behavior is explained as the combined result of efficient current injection and significant carrier overflow in a high-quality LED.
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