Journal
APPLIED PHYSICS LETTERS
Volume 94, Issue 5, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3079329
Keywords
antireflection coatings; electron beam deposition; indium compounds; nanostructured materials; semiconductor growth; semiconductor materials
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Funding
- National Science Council in Taiwan [NSC 96-2221-E-009-092-MY3, NSC 97-2120-M-006-009]
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Characteristic formation of highly oriented indium-tin-oxide (ITO) nanocolumns is demonstrated using electron-beam evaporation with an obliquely incident nitrogen flux. The nanocolumn material exhibits broadband and omnidirectional antireflective characteristics up to an incidence angle of 70 degrees for the 350-900 nm wavelength range for both s- and p-polarizations. Calculations based on a rigorous coupled-wave analysis indicate that the superior antireflection arises from the tapered column profiles which collectively function as a gradient-index layer. Since the nanocolumns have a preferential growth direction which follows the incident vapor flux, the azimuthal and polarization dependence of reflectivities are also investigated. The single ITO nanocolumn layer can function as antireflection contacts for light emitting diodes and solar cells.
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