Journal
APPLIED PHYSICS LETTERS
Volume 95, Issue 26, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3276910
Keywords
free energy; indium compounds; molecular beam epitaxial growth; plasma materials processing; semiconductor growth; semiconductor materials; semiconductor thin films; surface energy; surface roughness; surfactants; yttrium compounds; zirconium compounds
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Funding
- NSF [DMR05-20415]
- SSLEC
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The surface roughness of In2O3(001) films is a roadblock to potential semiconductor applications of this material. Using plasma-assisted molecular beam epitaxy we found that In2O3(001) films grow rough by the formation of {111} facets and In2O3(111) films grow smooth without facetting due to the conventionally used (oxygen-rich) conditions. This behavior indicates that the (111) surface is thermodynamically prefered over the (001) surface. We demonstrate that under indium-rich growth conditions these thermodynamics are changed allowing In2O3(001) films to grow smoothly without facetting. Surface indium plays a key role by acting as an auto surfactant that lowers the surface free energy difference between the (001) and the (111) surface.
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