Journal
APPLIED PHYSICS LETTERS
Volume 94, Issue 14, Pages -Publisher
AIP Publishing
DOI: 10.1063/1.3115805
Keywords
aluminium compounds; dislocations; gallium compounds; gold; III-V semiconductors; indium compounds; leakage currents; nickel; Poole-Frenkel effect; Schottky barriers; semiconductor heterojunctions; semiconductor-metal boundaries; wide band gap semiconductors
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Funding
- European Union [105A005, 106E198, 107A004]
- Turkish Academy of Sciences
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In order to determine the reverse-bias leakage current mechanisms in Schottky diodes on Al0.83In0.17N/AlN/GaN heterostructures, the temperature-dependent current-voltage measurements were performed in the temperature range of 250-375 K. In this temperature range, the leakage current was found to be in agreement with the predicted characteristics, which is based on the Frenkel-Poole emission model. The analysis of the reverse current-voltage characteristics dictates that the main process in leakage current flow is the emission of electrons from a trapped state near the metal-semiconductor interface into a continuum of states which associated with each conductive dislocation.
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