Journal
APPLIED PHYSICS LETTERS
Volume 95, Issue 4, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3192357
Keywords
copper compounds; crystal structure; high-temperature effects; semiconductor growth; semiconductor thin films; solar cells; space groups; ternary semiconductors; texture; thermodynamics; transmission electron microscopy; zinc compounds
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The growth mechanism of Cu2ZnSnS4 thin films is studied starting from highly textured ZnS precursor films. These precursors were converted to Cu2ZnSnS4 by subsequent deposition of Cu, Sn, and S at high temperatures. Orientation measurements revealed that the << 111 >> texture of the ZnS precursor is inherited by the Cu2ZnSnS4 layer. On the basis of texture and transmission electron microscopy measurements, a growth model is proposed. According to this model, the initial formation of Cu2ZnSnS4 nuclei is controlled by a topotactic or epitactic mechanism with respect to the ZnS precursor. The further growth of the Cu2ZnSnS4 grains appears to be independent of the precursor lattice.
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