Journal
APPLIED PHYSICS LETTERS
Volume 95, Issue 5, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3198204
Keywords
compressive strength; conduction bands; elemental semiconductors; germanium; Ge-Si alloys; SCF calculations; semiconductor heterojunctions; semiconductor materials; semiconductor quantum wells; tight-binding calculations
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Funding
- PRIN [N.20073KBYK8]
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In this letter we present the experimental evidence of intersubband absorption in the conduction band of compressively strained germanium quantum wells bounded by Ge-rich SiGe barriers. The measured absorption energies are in the terahertz range and are interpreted by means of tight binding calculations which include self-consistent band-bending and depolarization effects. From the comparison of experimental and numerical results a conduction band offset along the L line of about 120 meV has been estimated for the studied heterostructures.
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