Journal
APPLIED PHYSICS LETTERS
Volume 94, Issue 12, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3106108
Keywords
acousto-optical effects; aluminium compounds; cryptography; electroluminescence; gallium arsenide; III-V semiconductors; light emitting diodes; p-n junctions; semiconductor quantum wells; surface acoustic waves; transducers
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Funding
- European Commission
- Fondazione Silvio Tronchetti Provera
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A surface-acoustic-wave (SAW) driven light-emitting-diode structure that can implement a single-photon source for quantum-cryptography applications is demonstrated. Our lateral n-i-p junction is realized starting from an undoped GaAs/AlGaAs quantum well by gating. It incorporates interdigitated transducers for SAW generation and lateral gates for current control. We demonstrate acoustoelectric transport and SAW-driven electroluminescence. The acoustoelectric current can be controlled down to complete pinch-off by means of the lateral gates.
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