Journal
APPLIED PHYSICS LETTERS
Volume 94, Issue 10, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3100193
Keywords
carrier density; organic field effect transistors; paramagnetic resonance; polymers
Categories
Funding
- Grant-in-Aid for Scientific Research [17340094]
- Ministry of Education, Culture, Sports, Science and Technology of Japan [17067007]
- Grants-in-Aid for Scientific Research [17340094, 17067007] Funding Source: KAKEN
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Charge carrier concentration in operating field-effect transistor (FET) of regioregular poly(3-hexylthiophene) has been directly determined by electron spin resonance (ESR). ESR signals of field-induced polarons are observed around g=2.003 under the application of negative gate-source voltage (V(gs)). Upon applying drain-source voltage (V(ds)), ESR intensity decreases linearly in the low V(ds) region, reaching to about 50% of the initial intensity at the pinch-off point (V(ds)congruent to V(gs)). For larger absolute values of V(ds), it becomes nearly V(ds) independent. These behaviors are well explained by the change in the carrier concentration obtained by the FET theory using gradual channel approximation.
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