High-performance, fully transparent, and flexible zinc-doped indium oxide nanowire transistors

We report the fabrication of fully transparent and flexible nanowire transistors by combining a high-quality In2O3:Zn nanowire channel, a SiNx high-kappa dielectric, and conducting Sn-doped In2O3 electrodes on a polyethylene terephthalate substrate. The devices show excellent operating characteristics with high carrier mobilities up to 631 cm(2) V-1 s(-1), a drain-source current on/off modulation ratio similar to 1x10(6), a high on-state current similar to 1x10(-5) A, a small subthreshold gate voltage swing of 120 mV decade(-1), and a near zero threshold voltage. The devices further show high reproducibility and stable performance under bending condition. The high-performance nanowire transistors would enable application opportunities in flexible and transparent electronics.