Related references
Note: Only part of the references are listed.Molecular beam epitaxy and structural anisotropy of m-plane InN grown on free-standing GaN
G. Koblmueller et al.
APPLIED PHYSICS LETTERS (2008)
Basal plane stacking-fault related anisotropy in X-ray rocking curve widths of m-plane GaN
Melvin B. McLaurin et al.
JAPANESE JOURNAL OF APPLIED PHYSICS (2008)
Characterization of a-plane InN film grown on r-plane sapphire by MOCVD
X. L. Zhu et al.
JOURNAL OF CRYSTAL GROWTH (2008)
Absence of Fermi-level pinning at cleaved nonpolar InN surfaces
Chung-Lin Wu et al.
PHYSICAL REVIEW LETTERS (2008)
A growth diagram for plasma-assisted molecular beam epitaxy of In-face InN
C. S. Gallinat et al.
JOURNAL OF APPLIED PHYSICS (2007)
Universality of electron accumulation at wurtzite c- and a-plane and zinc-blende InN surfaces
P. D. C. King et al.
APPLIED PHYSICS LETTERS (2007)
Evidence of electron accumulation at nonpolar surfaces of InN nanocolumns
E. Calleja et al.
APPLIED PHYSICS LETTERS (2007)
Surface kinetics and thermal instability of N-face InN grown by plasma-assisted molecular beam epitaxy
G. Koblmuller et al.
JOURNAL OF APPLIED PHYSICS (2007)
RF-MBE growth of a-plane InN on r-plane sapphire with a GaN underlayer
G. Shikata et al.
JOURNAL OF CRYSTAL GROWTH (2007)
Defect-mediated surface morphology of nonpolar m-plane GaN
A. Hirai et al.
APPLIED PHYSICS LETTERS (2007)
Buried p-type layers in mg-doped InN
P. A. Anderson et al.
APPLIED PHYSICS LETTERS (2006)
Origins of Fermi-level pinning on GaN and InN polar and nonpolar surfaces
D. Segev et al.
EUROPHYSICS LETTERS (2006)
Growth of p-type and n-type m-plane GaN by molecular beam epitaxy
M. McLaurin et al.
JOURNAL OF APPLIED PHYSICS (2006)
Optimization of the surface and structural quality of N-face InN grown by molecular beam epitaxy
G. Koblmuller et al.
APPLIED PHYSICS LETTERS (2006)
In-polar InN grown by plasma-assisted molecular beam epitaxy
Chad S. Gallinat et al.
APPLIED PHYSICS LETTERS (2006)
A-plane (1120) InN growth on nitridated R-plane (1012) sapphire by ECR-MBE
Y. Kumagai et al.
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS (2006)
Emission properties of a-plane GaN grown by metal-organic chemical-vapor deposition -: art. no. 093519
PP Paskov et al.
JOURNAL OF APPLIED PHYSICS (2005)
Microstructure and enhanced morphology of planar nonpolar m-plane GaN grown by hydride vapor phase epitaxy
BA Haskell et al.
JOURNAL OF ELECTRONIC MATERIALS (2005)
Microstructural evolution of a-plane GaN grown on a-plane SiC by metalorganic chemical vapor deposition
MD Craven et al.
APPLIED PHYSICS LETTERS (2004)
Growth of a-plane InN on r-plane sapphire with a GaN buffer by molecular-beam epitaxy
H Lu et al.
APPLIED PHYSICS LETTERS (2003)
Surface charge accumulation of InN films grown by molecular-beam epitaxy
H Lu et al.
APPLIED PHYSICS LETTERS (2003)
Structural characterization of nonpolar (11(2)over-bar0) a-plane GaN thin films grown on (1(1)over-bar02) r-plane sapphire
MD Craven et al.
APPLIED PHYSICS LETTERS (2002)