Journal
APPLIED PHYSICS LETTERS
Volume 95, Issue 16, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3245315
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Funding
- NSF [CBET/0756359, 0854554, DMR/0748910]
- SRC [DMR/0748910]
- Directorate For Engineering [0854554] Funding Source: National Science Foundation
- Div Of Chem, Bioeng, Env, & Transp Sys [0854554] Funding Source: National Science Foundation
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The thermal contact resistance between graphene and silicon dioxide was measured using a differential 3 omega method. The sample thicknesses were 1.2 (single-layer graphene), 1.5, 2.8, and 3.0 nm, as determined by atomic force microscopy. All samples exhibited approximately the same temperature trend from 42 to 310 K, with no clear thickness dependence. The contact resistance at room temperature ranges from 5.6 x 10(-9) to 1.2 x 10(-8) m(2) K/W, which is significantly lower than previous measurements involving related carbon materials. These results underscore graphene's potential for applications in microelectronics and thermal management structures. (C) 2009 American Institute of Physics. [ doi: 10.1063/1.3245315]
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