Journal
APPLIED PHYSICS LETTERS
Volume 95, Issue 2, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3179557
Keywords
elemental semiconductors; nanostructured materials; nucleation; oxidation; reaction kinetics; silicon; silicon compounds; solid-state plasma
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The nucleation-initiated oxidation of a Si surface at very low temperatures in plasmas is demonstrated experimentally, in contrast to the Deal-Grove mechanism, which predicts Si oxidation at a Si/SiO interface and cannot adequately describe the formation of SiO nanodots and oxidation rates at very low (several nanometers) oxide thickness. Based on the experimental results, an alternative oxidation scenario is proposed and supported by multiscale numerical simulations suggesting that saturation of micro- and nanohillocks with oxygen is a trigger mechanism for initiation of Si surface oxidation. This approach is generic and can be applied to describe the kinetics of low-temperature oxidation of other materials.
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