Journal
APPLIED PHYSICS LETTERS
Volume 95, Issue 18, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3259821
Keywords
annealing; Curie temperature; doping profiles; electrical resistivity; ferromagnetic materials; gallium arsenide; gallium compounds; galvanomagnetic effects; hopping conduction; III-V semiconductors; manganese compounds; semiconductor doping; semiconductor thin films; semimagnetic semiconductors
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Funding
- National Natural Science Foundation of China [60836002, 10674130]
- Major State Basic Research of China [2007CB924903]
- Chinese Academy of Sciences [KJCX2.YW.W09-1]
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We report the low-temperature magnetotransport behaviors of (Ga,Mn)As films with the nominal Mn concentration x larger than 10%. The ferromagnetic transition temperature T-C can be enhanced to 191 K after postgrowth annealing (Ga,Mn)As with x=20%. The temperature T-m, corresponding to the resistivity minimum in the curve of resistivity versus temperature at temperature below T-C, depends on Mn concentration, annealing condition, and magnetic field. Moreover, we find that the variable-range hopping may be the main conductive mechanism when temperature is lower than T-m.
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