Related references
Note: Only part of the references are listed.Germanium-induced stabilization of a very high-k zirconia phase in ZrO2/GeO2 gate stacks
P. Tsipas et al.
APPLIED PHYSICS LETTERS (2008)
Electronic structure of GeO2-passivated interfaces of (100)Ge with Al2O3 and HfO2
V. V. Afanas'ev et al.
APPLIED PHYSICS LETTERS (2008)
The effect of dopants on the dielectric constant of HfO2 and ZrO2 from first principles
Dominik Fischer et al.
APPLIED PHYSICS LETTERS (2008)
Ge-interface engineering with ozone oxidation for low interface-state density
Duygu Kuzum et al.
IEEE ELECTRON DEVICE LETTERS (2008)
On the correct extraction of interface trap density of MOS devices with high-mobility semiconductor substrates
Koen Martens et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2008)
Chemical Bonding, Interfaces, and Defects in Hafnium Oxide/Germanium Oxynitride Gate Stacks on Ge(100)
Yasuhiro Oshima et al.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY (2008)
Dangling-bond defects and hydrogen passivation in germanium
J. R. Weber et al.
APPLIED PHYSICS LETTERS (2007)
Electronic structure of germanium nitride considered for gate dielectrics
M. Yang et al.
JOURNAL OF APPLIED PHYSICS (2007)
Fabrication of GeO2 layers using a divalent Ge precursor
M. Perego et al.
APPLIED PHYSICS LETTERS (2007)
Electrical properties of germanium/metal-oxide gate stacks with atomic layer deposition grown hafnium-dioxide and plasma-synthesized interface layers
Takuya Sugawara et al.
APPLIED PHYSICS LETTERS (2007)
Role of germanium nitride interfacial layers in HfO2/germanium nitride/germanium metal-insulator-semiconductor structures
Tatsuro Maeda et al.
APPLIED PHYSICS LETTERS (2007)
Mechanism of germanium plasma nitridation
Takuya Sugawara et al.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B (2006)
In situ infrared spectroscopy of hafnium oxide growth on hydrogen-terminated silicon surfaces by atomic layer deposition -: art. no. 133103
MT Ho et al.
APPLIED PHYSICS LETTERS (2005)
Interface traps and dangling-bond defects in (100)Ge/HfO2 -: art. no. 032107
VV Afanas'ev et al.
APPLIED PHYSICS LETTERS (2005)
Intrinsic carrier effects in HfO2-Ge metal-insulator-semiconductor capacitors -: art. no. 223507
A Dimoulas et al.
APPLIED PHYSICS LETTERS (2005)
Direct comparison of ZrO2 and HfO2 on Ge substrate in terms of the realization of ultrathin high-κ gate stacks
Y Kamata et al.
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS (2005)