Journal
APPLIED PHYSICS LETTERS
Volume 94, Issue 19, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3120281
Keywords
chemical sensors; elemental semiconductors; field effect transistors; nanoelectronics; nanofabrication; nanowires; organic compounds; silicon
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Funding
- Innovation and Technology Commission of Hong Kong SAR [ITS/029/08]
- National Basic Research Program of China (973 Program) [2006CB933000]
- National High Technology R&D Program of China (863 Program) [2007AA03Z301, 2006AA03Z302]
- National Natural Science Foundation of China (NSFC) [60806028]
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High-sensitivity detection of toxic heavy metal cations such as Hg2+ and Cd2+ ions was demonstrated using single silicon nanowire field-effect transistors (SiNW-FETs). The conduct-ance of FET fabricated from thermally oxidized SiNWs functionalized with 3-mercaptopropyltriethoxysilane showed high sensitivity to Hg2+ and Cd2+ ions at a concentration down to 10(-7) and 10(-4)M, respectively. Linear relationship between the logarithmic concentration of metal ions and the current change was observed. The SiNW sensor could be recycled to regain nearly the same sensitivity. Comparative experiments showed that SiNW-FET sensors have great selectivity for detecting Hg2+ and Cd2+ over other metal cations.
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