Journal
APPLIED PHYSICS LETTERS
Volume 94, Issue 4, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3074373
Keywords
aluminium; electrical resistivity; electron density; electron mobility; grain boundaries; Hall mobility; II-VI semiconductors; semiconductor thin films; sputtered coatings; wide band gap semiconductors; zinc compounds
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Funding
- Free State of Saxony [11815/1854]
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The study is focused on the improvement of the free electron mobility in Al-doped ZnO films grown by reactive pulsed magnetron sputtering. At optimum growth conditions low-absorbing films are obtained with a Hall mobility of 46 cm(2) V(-1) s(-1), a free electron density of 6.0x10(20) cm(-3), and an electrical resistivity of 2.26x10(-4) Omega cm. The relation between the mobility and free electron density for different growth conditions is discussed in terms of ionized impurity scattering, impurity clustering, and grain boundary limited transport.
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