Journal
APPLIED PHYSICS LETTERS
Volume 95, Issue 14, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3238558
Keywords
-
Categories
Funding
- National Science Foundation [CHE-0408554, CHE-0715552]
Ask authors/readers for more resources
Metal atomic layer deposition (ALD) on oxides can display long nucleation periods and high growth temperatures that may be caused by surface poisoning by reaction products. Exposures of trimethylaluminum (TMA) during Pd ALD using Pd (hfac)(2) and formalin on Al2O3 surfaces can shorten the nucleation period and reduce the growth temperatures. Fourier transform infrared spectroscopy studies indicate that TMA removes Al(hfac)* species that block surface sites. Pd ALD nucleates more readily and grows at lower temperatures because higher temperatures are not needed to desorb Al (hfac)* species. Transmission electron microscopy analysis shows the differences between Pd ALD films deposited with and without TMA. (C) 2009 American Institute of Physics. [doi:10.1063/1.3238558]
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available