Related references
Note: Only part of the references are listed.Ultrawide band quantum dot light emitting device by postfabrication laser annealing
C. K. Chia et al.
APPLIED PHYSICS LETTERS (2007)
Novel passivation process for the mirror facets of Al-free active-region high-power semiconductor diode lasers
P Ressel et al.
IEEE PHOTONICS TECHNOLOGY LETTERS (2005)
Group-V intermixing in InAs/InP quantum dots
CK Chia et al.
APPLIED PHYSICS LETTERS (2005)
Improved performance of 1.3 μm multilayer InAs quantum-dot lasers using a high-growth-temperature GaAs spacer layer
HY Liu et al.
APPLIED PHYSICS LETTERS (2004)
Facet temperature reduction by a current blocking layer at the front facets of high-power InGaAs/AlGaAs lasers
F Rinner et al.
JOURNAL OF APPLIED PHYSICS (2003)
Improved catastrophic optical damage level from laser with nonabsorbing mirrors
CL Walker et al.
IEEE PHOTONICS TECHNOLOGY LETTERS (2002)
Over 200-mW operation of single-lateral mode 780-nm laser diodes with window-mirror structure
Z Kawazu et al.
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS (2001)
Share Paper
