Magnetization-controlled conductance in (Ga,Mn)As-based resonant tunneling devices

We report on experimental evidence of a magnetization-controlled conductance in AlAs/GaAs/AlAs resonant tunneling diodes contacted by a (Ga,Mn)As ferromagnetic electrode. Large shifts of the resonance voltages occur as the magnetization is rotated from in-plane to out-of-plane directions resulting in a singular tunneling anisotropic magnetoresistance signal. This opens the way to control the tunneling current upon the magnetization orientation of the magnetic layer, playing the role of a magnetic gate. (C) 2009 American Institute of Physics. [doi:10.1063/1.3250172]