Journal
APPLIED PHYSICS LETTERS
Volume 95, Issue 16, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3253706
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- Deutsche Forschungsgemeinschaft (DFG) [KO 1953/9-1]
- German Academic Exchange Service (DAAD) [D/07/15740]
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The concept of a magnetic tunnel junction fabricated on a ferroelectric substrate is described theoretically. It is shown that the application of a moderate electric field to a substrate having strong piezoelectric response may induce an in-plane magnetization rotation in a ferromagnetic electrode made of a highly magnetostrictive cubic material with small magnetocrystalline anisotropy. Remarkably, an abrupt change of the junction's electrical resistance can result from the substrate-induced magnetization reorientation in the free ferromagnetic layer. Hence the described hybrid multiferroic device may be employed as an electric-write nonvolatile magnetic memory cell with nondestructive readout. (C) 2009 American Institute of Physics. [doi: 10.1063/1.3253706]
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