Journal
APPLIED PHYSICS LETTERS
Volume 95, Issue 17, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3254329
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Funding
- NRI (Nanoelectronics Research Initiative) through MIND (Midwest Institute of Nanoelectronics Discovery)
- DARPA
- Intel Cooperation
- NSF [DMR-0084173, ECS-0348289]
- State of Florida
- DOE
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Epitaxial graphene films examined were formed on the Si-face of semi-insulating 4H-SiC substrates by a high temperature sublimation process. A high-k gate stack on the epitaxial graphene was realized by inserting a fully oxidized nanometer thin aluminum film as a seeding layer, followed by an atomic-layer deposition process. The electrical properties of epitaxial graphene films are retained after gate stack formation without significant degradation. At low temperatures, the quantum-Hall effect in Hall resistance is observed along with pronounced Shubnikov-de Haas oscillations in diagonal magnetoresistance of gated epitaxial graphene on SiC (0001). (C) 2009 American Institute of Physics. [doi:10.1063/1.3254329]
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