4.6 Article

Low voltage operation in picene thin film field-effect transistor and its physical characteristics

Journal

APPLIED PHYSICS LETTERS
Volume 95, Issue 18, Pages -

Publisher

AMER INST PHYSICS
DOI: 10.1063/1.3257373

Keywords

coatings; dielectric materials; gas sensors; organic compounds; organic field effect transistors; photoelectron spectra; polymers; silicon compounds; thin film transistors; thin films; X-ray diffraction

Funding

  1. MEXT, Japan [18340104, 20045012]
  2. Japan Science and Technology Agency
  3. Grants-in-Aid for Scientific Research [18340104, 20045012] Funding Source: KAKEN

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Low voltage operation of picene thin film field-effect transistor (FET) has been realized with 40 nm thick SiO(2) gate dielectrics coated by two polymers, Cytop (TM) and polystyrene. The picene FETs operated in low absolute gate voltage vertical bar V(G)vertical bar below 15 V for Cytop (TM) coated SiO(2) and 30 V for polystyrene coated SiO(2) gate dielectrics, and they showed a significant O(2) gas sensing effect down to similar to 10 ppm. Photoemission spectrum clarified that O(2) molecules penetrate into the thin films at O(2)/picene mole ratio of 1: 1. X-ray diffraction pattern of picene thin films showed highly oriented growth on the polymer-coated SiO(2).

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