p-type conduction in arsenic-doped ZnSe nanowires

Reliable p-type conduction was achieved in ZnSe nanowires (NWs) synthesized by introducing Zn3As2 as a dopant source. The crystal structure and orientation of NWs remained unchanged after doping. The electrical and transport properties of As-doped ZnSe NWs were investigated via the characteristics of NW-based field-effect transistors. The origin of p-type conduction in ZnSe NWs is attributed to the formation of substitutional As-Se and As-Zn-2V(Zn) complexes. Arsenic atoms were considered to incorporate into ZnSe lattices partly as As-H pairs; therefore postgrowth annealing could improve p-type conduction by dissociating As-H bonds and activating As acceptors.