Journal
APPLIED PHYSICS LETTERS
Volume 95, Issue 7, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3207886
Keywords
aluminium compounds; cyclotron resonance; field effect transistors; gallium arsenide; III-V semiconductors; indium compounds; photodetectors; plasma waves; Shubnikov-de Haas effect; terahertz wave detectors
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Funding
- CNRS GDR-E
- EU [CT-2005-029671]
- Polish Ministry of Higher Education [162/THz/2006/02]
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We report on terahertz radiation detection with InGaAs/InAlAs field effect transistors in quantizing magnetic field. The photovoltaic detection signal was investigated as a function of the gate voltage and magnetic field. Oscillations analogous to Shubnikov-de Haas oscillations as well as their strong enhancement at the cyclotron resonance were observed. The results are quantitatively described by a recent theory, showing that the detection is due to rectification of the terahertz radiation by plasma waves related nonlinearities in the gated part of the channel.
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