4.6 Article

Terahertz radiation detection by field effect transistor in magnetic field

Journal

APPLIED PHYSICS LETTERS
Volume 95, Issue 7, Pages -

Publisher

AMER INST PHYSICS
DOI: 10.1063/1.3207886

Keywords

aluminium compounds; cyclotron resonance; field effect transistors; gallium arsenide; III-V semiconductors; indium compounds; photodetectors; plasma waves; Shubnikov-de Haas effect; terahertz wave detectors

Funding

  1. CNRS GDR-E
  2. EU [CT-2005-029671]
  3. Polish Ministry of Higher Education [162/THz/2006/02]

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We report on terahertz radiation detection with InGaAs/InAlAs field effect transistors in quantizing magnetic field. The photovoltaic detection signal was investigated as a function of the gate voltage and magnetic field. Oscillations analogous to Shubnikov-de Haas oscillations as well as their strong enhancement at the cyclotron resonance were observed. The results are quantitatively described by a recent theory, showing that the detection is due to rectification of the terahertz radiation by plasma waves related nonlinearities in the gated part of the channel.

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