Journal
APPLIED PHYSICS LETTERS
Volume 95, Issue 12, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3232220
Keywords
-
Categories
Funding
- International Cooperation and Exchanges [50620120439, 2006DFB51000]
- National Basic Research Program of China [2007CB936201]
- National Natural Science Foundation of China [10876001]
Ask authors/readers for more resources
The authors observed a negative differential resistance (NDR) in the PtIr/ZnO ribbon/sexithiophen hybrid double diodes consisting of the back-to-back Schottky and p-n junction diodes. The NDR phenomenon was found to become more and more obvious as the loading forces increased. The origin of the NDR was discussed in terms of the energy band diagram of the heterostructure, and then it was suggested to be attributed to the current-induced breakdown instead of electron resonant tunneling through the structure. (C) 2009 American Institute of Physics. [doi:10.1063/1.3232220]
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available