Bipolar resistive electrical switching of silver tetracyanoquinodimethane based memory cells with dedicated silicon dioxide switching layer

We demonstrate reliable and durable (>100 write/erase cycles) bipolar resistive electrical switching of silver tetracyanoquinodimethane (AgTCNQ) based memories by incorporating a dedicated SiO2 switching layer and limiting the on state current by a current compliance. Switching back to the off state required voltages of opposite polarity with higher current intensity; keeping the same current compliance level typically prevented-and exceptionally lead to time delayed-off switching. Simultaneous growth and dissolution of the conductive channels could be observed during the on to off transition. All of these findings give further evidence that the switching mechanism involves electrochemical processes. (C) 2009 American Institute of Physics. [doi: 10.1063/1.3242415]